PC(W)IC(A)Vcbo(V)Vceo(V)Vebo(V)hFEhFE VCE(V)hFE IC(A)Cob(pF)TYPPackage200 30 60 60 5 1000- 5 20 TO-3
MJ11012 |
RFQ for MJ11012 |
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| Technical/Catalog Information | MJ11012G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 30A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Frequency - Transition | 4MHz |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJ11012G MJ11012G MJ11012GOS ND MJ11012GOSND MJ11012GOS |
| Product | Manufacturers | Pack | D/C | ||||||||||
| MJ11012 | - | - | 500 |
Typical Application |
| • High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc• Monolithic Construction with Builtin Base Emitter Shunt Resistor• Junction Temperature to +200 |
|
Rating |
Symbol |
MJ11012 |
MJ11013 MJ11014 |
MJ11015 MJ11016 |
Unit |
| CollectorEmitter Voltage |
VCEO |
60 |
90 |
120 |
Vdc |
| Collector Base Voltage |
VCBO |
60 |
90 |
120 |
Vdc |
| EmitterBase Voltage |
VEBO |
5 |
Vdc | ||
| Collector Current |
IC |
30 |
Adc | ||
| Base Current |
IB |
1 |
Adc | ||
| Total Device Dissipation @TC = 25 Derate above 25 @ TC = 100 |
PD |
200 |
Watts W/ | ||
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to +200
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